AlphaIGBT™ products offer 2.5 times lower turn-off switching loss (EOFF).
2 x higher short circuit withstand time compared to current leading competition device with similar VCE(SAT).
Ultra low gate-charge (Qg) makes devices easy to drive.
Low QGC/QGE ratio allows devices to withstand higher dV/dt transients.
Positive temp° coefficient of VCE(SAT) and low overall gate charge characteristics of AlphaIGBT™ technology allow designers to parallel more devices or larger devices with existing drive circuits.